Solid State Electronic Devices; Ben G. Streetman; 1999
Begagnad
Solid State Electronic Devices; Ben G. Streetman; 1999
Begagnad

Solid State Electronic DevicesUpplaga 5

av Ben G. Streetman

  • Upplaga: 5e upplagan
  • Utgiven: 1999
  • ISBN: 9780130261014
  • Sidor: 558 st
  • Förlag: Pearson Education
  • Format: Häftad
  • Språk: Engelska

Om boken

This book is designed to help readers gain a basic understanding of semiconductor devices and the physical operating principles behind them. This two-fold approach 1) provides the user with a sound understanding of existing devices, and 2) helps them develop the basic tools with which they can later learn about applications and the latest devices. The piece provides one of the most comprehensive treatments of all the important semiconductor devices, and reflects the most current trends in the technology and theoretical understanding of the devices. FEATURES/BENEFITS NEWThoroughly updated to reflect the most current trends in the technology and theoretical understanding of devices. NEWExpanded description of silicon Czochralski growth, wafer production, and vapor phase epitaxy (Ch. 1). NEWClearer discussion of chemical bonding, energy band formation and hole transport (Chs. 2, 3 and 4). NEWConsolidated coverage of p-n junction diodes and its applications (Ch. 5). NEWGreatly expanded/updated discussion of device fabrication processes (Ch. 5 and appendices). NEWEarlier discussion of MOS devices (Ch. 6)Ahead of bipolar junction transistorsreflects the preponderance of complementary MOS field effect transistors (MOSFETs) in integrated circuits today. NEWMajor revision of chapter on Field Effect Transistors (Ch. 6)Both in the underlying theory as well as discussion of a variety of short channel, high field and hot carrier effects in scaled, ultra-small MOSFETs. Includes extensive discussions of the current-voltage and capacitance-voltage characteristics of these devicesand the information that can be gleaned from such measurements. NEWUpdated chapter on Bipolar Junction Transistors (BJTs) (Ch. 7)To reflect current technology. Describes higher-order effects (including the Kirk effect and Webster effect); discusses the Gummel-Poon model (which is more elaborate and physically more accurate than the Ebers-Moll model); and updates the fabrication aspects of BJTs. NEWConsolidated coverage of optoelectronic devices in a single chapter (Ch. 8)Brings the discussion of semiconductor lasers into the same chapter as LEDs and detectors Reflects the growing importance of optoelectronics. NEWUpdated coverage of integrated circuits (Ch. 9)Eliminates outdated material on bipolar processes to reflect the concerted shift to CMOS applications, such as logic and memory integrated circuits. NEWA section on the insulated gate bipolar transistor (Ch. 11)A device that is gradually supplanting the semiconductor-controlled rectifier. NEWReal dataWherever feasible, replaces idealized current-voltage and capacitance-voltage plots with real data.

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Mer om Solid State Electronic Devices (1999)

I augusti 1999 släpptes boken Solid State Electronic Devices skriven av Ben G. Streetman. Det är den 5e upplagan av kursboken. Den är skriven på engelska och består av 558 sidor. Förlaget bakom boken är Pearson Education.

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Referera till Solid State Electronic Devices (Upplaga 5)

Harvard

Streetman, B. G. (1999). Solid State Electronic Devices. 5:e uppl. Pearson Education.

Oxford

Streetman, Ben G., Solid State Electronic Devices, 5 uppl. (Pearson Education, 1999).

APA

Streetman, B. G. (1999). Solid State Electronic Devices (5:e uppl.). Pearson Education.

Vancouver

Streetman BG. Solid State Electronic Devices. 5:e uppl. Pearson Education; 1999.

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