ESD Physics and Devices; Steven Howard Voldman; 2004
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ESD Physics and Devices Upplaga 1

av Steven Howard Voldman
This volume is designed as the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. Coverage will complement the approach taken by Amerasekera and Duvvury as Voldman focuses on new semiconductor technologies such as Silicon Germanium, Gallium Nitride and Indium Phosphide. *Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. *Analyses the behaviour of semiconductor devices under ESD conditions. *Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. *Covers ESD testing, failire criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. *Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design.  Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

 
This volume is designed as the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. Coverage will complement the approach taken by Amerasekera and Duvvury as Voldman focuses on new semiconductor technologies such as Silicon Germanium, Gallium Nitride and Indium Phosphide. *Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. *Analyses the behaviour of semiconductor devices under ESD conditions. *Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. *Covers ESD testing, failire criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. *Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design.  Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

 
Upplaga: 1a upplagan
Utgiven: 2004
ISBN: 9780470847534
Förlag: John Wiley & Sons
Format: Inbunden
Språk: Engelska
Sidor: 320 st
This volume is designed as the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. Coverage will complement the approach taken by Amerasekera and Duvvury as Voldman focuses on new semiconductor technologies such as Silicon Germanium, Gallium Nitride and Indium Phosphide. *Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. *Analyses the behaviour of semiconductor devices under ESD conditions. *Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. *Covers ESD testing, failire criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. *Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design.  Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

 
This volume is designed as the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. Coverage will complement the approach taken by Amerasekera and Duvvury as Voldman focuses on new semiconductor technologies such as Silicon Germanium, Gallium Nitride and Indium Phosphide. *Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. *Analyses the behaviour of semiconductor devices under ESD conditions. *Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. *Covers ESD testing, failire criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. *Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design.  Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

 
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